6
RF Device Data
Freescale Semiconductor
MRF6S19140HR3 MRF6S19140HSR3
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
1 10010
?60
0
0.1
7th Order
TWO?TONE SPACING (MHz)
VDD
= 28 Vdc, P
out
= 160 W (PEP), I
DQ
= 1150 mA
Two?Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
5th Order
3rd Order
?10
?20
?30
?40
?50
Figure 8. Pulsed CW Output Power versus
Input Power
Figure 9. 2-Carrier N-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0
?70
Pout, OUTPUT POWER (WATTS) AVG.
50
?20
40
?30
30
?40
?50
10
?60
1 10 100
20
VDD= 28 Vdc, IDQ
= 1150 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2?Carrier N?CDMA, 2.5 MHz Carrier
Spacing, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
TC
= 25
°C
38 40 41
42
58
29
30
31
32 3433 3635 3937
Pin, INPUT POWER (dBm)
VDD
= 28 Vdc, I
DQ
= 1150 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1960 MHz
56
54
52
50
46
Actual
Ideal
P1dB = 52.3 dBm (171 W)
57
55
51
53
49
28
100
10
17
1
0
70
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD
= 28 Vdc, I
DQ
= 1150 mA
f = 1960 MHz, TC
= 25
°C
10
16
15
14
13
12
11
60
50
40
30
20
10
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
VDD
= 32 V
IM3
Gps
ACPR
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
IM3 (dBc), ACPR (dBc)
η
D
,
DRAIN EFFICIENCY (%)
Gps
ηD
G
ps
, POWER GAIN (dB)
250
8
18
0 20050
100 150
17
13
12
11
10
9
15
14
16
28 V
IDQ
= 1150 mA
f = 1960 MHz
P
out
, OUTPUT POWER (dBm)
G
ps
, POWER GAIN (dB)
48
47
P3dB = 53.1 dBm (204 W)
ηD
300
24 V
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